AI Summary
This article highlights a breakthrough in semiconductor patterning with a new block copolymer achieving a line width of 7.6 nm. The chemically tailored compound can self-assemble into perpendicular lamellar structures, surpassing traditional block copolymers and potentially advancing integration and miniaturization in semiconductor manufacturing.
A recently developed block copolymer could help push the limits of integration and miniaturization in semiconductor manufacturing, report scientists. Chemically tailored for reliable directed self-assembly, the proposed compound can arrange itself into perpendicular lamellar structures whose half-pitch width is less than 10 nanometers, outperforming conventional and widely used block copolymers.